Development of Graphene-Based RF Integrated Circuits
Thursday, December 12, 2013 from 6:30 PM to 8:30 PM (PST)
Santa Clara,, CA
San Francisco, California
London, United Kingdom
Graphene is a two-dimensional (2D) material, consisting of a sheet of carbon atoms arranged in a honeycomb lattice, and possesses exciting potential for high frequency electronics due to its high intrinsic carrier mobility (> 10,000 cm2/Vs at room temperature) and large saturation velocity (~ 5.5´107 cm/s), both of which greatly exceed the corresponding values in silicon. The potential of any new material to make a significant impact into the modern world of microelectronics is contingent on its ability to achieve scalable integration into practical circuits. After the successful demonstration of graphene devices with cut-off frequencies in the GHz-range, the next major step to move graphene technology forward into the practical domain of RF electronics is to address the challenges associated with circuit integration. This presentation summarizes the recent development and characterization of graphene-based RF devices and integrated circuits. The first wafer-scale process developed for graphene RFIC integration on SiC wafers is discussed along with the design and measurements of a 5-GHz down-conversion mixer. Next, a frequency doubler fabricated on CVD graphene is presented as a proof-of-concept of graphene-based circuits in a 200mm platform. Finally, some of the special properties if these ICs (such as their low sensitivity to temperature variations), and the remaining challenges for graphene RFIC technology will be discussed.
Eventbrite registration is mandatory for every one to attend the short course.
Qualcomm employees should register for "Qualcomm Employee" free ticket and are eligible for free admission with Qualcomm badge.
QualComm Santa Clara
3165 Kifer Road
Santa Clara, CA 95051
Time: December 12th (Thursday) evening 6.30 pm-8.30pm.
Networking and snacks : 6.30 PM- 7:00 PM
Technical Talk : 7.00 PM- 8.00 PM
Alberto Valdes-Garcia is currently a Research Staff Member and Manager of the RF Circuits and Systems Group at the IBM T. J. Watson Research Center. He received the Ph.D. degree in Electrical Engineering from Texas A&M University in 2006. His present work is on silicon-integrated millimeter-wave systems and carbon electronics.
From 2006 to 2009, Dr. Valdes-Garcia served in the IEEE 802.15.3c 60GHz standardization committee. Since 2009 he serves as Technical Advisory Board member with Semiconductor Research Corporation (SRC), where he was Chair of the Integrated Circuits and Systems Sciences Coordinating Committee in 2011 and 2012. In spring 2013 he was also an Adjunct Assistant Professor at Columbia University. He holds 8 issued US patents with 25+ pending. His scholarly work (65+ authored or co-authored publications) has already received more than 1300+ independent citations in indexed journals. He is a co-Editor of the book 60GHz technology for Gbps WLAN and WPAN: From Theory to Practice (Wiley, 20011).
Dr. Valdes-Garcia is the winner of the 2005 Best Doctoral Thesis Award presented by the IEEE Test Technology Technical Council (TTTC), the recipient of the 2007 National Youth Award for Outstanding Academic Achievements, presented by the President of Mexico, and a co-recipient of the 2010 George Smith Award presented by the IEEE Electron Devices Society. In 2013, he was selected by the National Academy of Engineering for its Frontiers of Engineering Symposium.