San Francisco, California
London, United Kingdom
of Silicon Valley Presents:
A New Nonvolatile Memory Technology - Persistance Pays Off
Date: Tuesday, September 9, 2014
Speaker: Edward Grochowski, Computer Memory and Storage Consultant
Time: 6:30 PM (PT) Networking/Refreshments, 7:00 PM Presentation
Location: Cadence / Bldg 10, 2655 Seely Ave, San Jose, CA (map)
The application of a spin torque tunneling technology to MRAM devices has opened new opportunities for higher density circuits which may be very competitive with DRAM as well as SRAM. STT RAM devices have the potential of significantly reducing SOC dimensions while maintaining similar functionality and storage capacity. By converging the functions of DRAM, FLASH, ROM and SRAM this non volatile technology can provide a new generation of high density circuits which will simplify system architecture and enhance performances. It could be possible to enhance the STT RAM technology to provide a multi-bit device ideal for high density and low cost storage applications. A comparison with other NV storage and memory technologies will be discussed.
Dr. Ed Grochowski is a well known speaker on magnetic and solid state storage technology. He began his career with IBM’s microelectronic silicon activity in New York and later joined the IBM Almaden Research Center in San Jose, California. He has served the memory and computer storage industry for many years. His interests included hard disk drives, magnetic component evolutionary trends, solid state memories including Flash, STT RAM , other non volatile material technologies and their associated devices. Dr. Grochowski holds twelve patents and has authored and presented numerous articles on magnetic disk drives, MRAM and NV component technology, including a website of storage trend charts. He has a Ph.D. from New York University. Ed served as Executive Director of IDEMA USA and for over ten years chaired the conferences and technical committees for DISKCON USA and DISKCON Asia Pacific, as well as the prestigious Symposium series. He was a long time coordinator of the 4K byte sector standards committee. Ed is also a member of the IEEE.
As a consultant, Dr. Grochowski has been associated with Hitachi GST, IDC, TrendFocus and Coughlin Associates. He has participated as an expert witness in many cases involving patent litigation and trade secret protection. He is experienced in depositions as well as generating written analyses of patent evaluations.
Ed is continually invited to present his views on the latest memory and storage technologies at ongoing technical conferences both in the US and overseas.
With Coughlin Associates, he has co-authored comprehensive storage reports addressing HDD and NV storage technology trends and capital equipment requirements for the years 2008-2018. He has supported the iNEMI reports on storage technology.
Web site: http://computer.ieeesiliconvalley.org
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